Copper Interconnects for Advanced Performance and Reliability
The CopPeR project will provide a novel copper deposition process based on the use of non-aqueous solvents to overcome the limitations of currently applied interconnect formation processes enabling device scaling beyond the 32 nm technology node.
The project aims to develop a novel copper deposition process based on the use of non-aqueous solvents in order to overcome the limitations of currently applied interconnect formation processes enabling device scaling beyond the 32 nm technology node. This non-aqueous process will open novel routes to implement direct-on-barrier plating, focussing on tantalum and ruthenium as diffusion barriers. The process developed and implemented within the CopPeR project will significantly improve the quality of the Cu metallization due to the fact that the conductivity limiting seed-Cu will be eliminated and thinner barrier films can be applied, e.g. by ALD (atomic layer deposition); so more volume is available in trenches for high quality, low resistivity Cu.
Motivation:The semiconductor industry has arrived at a point where the scaling laws are starting to drive more scientific then engineering challenges. Specific issues are the increasing process variability, the expected physical and reliability limitations of devices and in interconnects as well as the need for new characterization methods and techniques. Long term challenges to enhance interconnect performance at and beyond the 32 nm node deal with substantially sophisticated tasks:
- introducing novel interconnect schemes
- introduction of new interconnect processes and materials
- enhanced modelling and simulation techniques for several applications