• Facts:
  • Project name: Copper Interconnects for Advanced Performance and Reliability
  • Project acronym: CopPeR
  • Project Coordinator: Technikon Forschungs- und Planungsgesellschaft mbH
  • Project start: January 2008
  • Project duration: 3 years

Project is co-financed by European Comission
(under Seventh Framework Programme)

Download:

COPPER leaflet.pdf
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Project Partners:

CopPeR

Copper Interconnects for Advanced Performance and Reliability

The CopPeR project will provide a novel copper deposition process based on the use of non-aqueous solvents to overcome the limitations of currently applied interconnect formation processes enabling device scaling beyond the 32 nm technology node.

The project aims to develop a novel copper deposition process based on the use of non-aqueous solvents in order to overcome the limitations of currently applied interconnect formation processes enabling device scaling beyond the 32 nm technology node. This non-aqueous process will open novel routes to implement direct-on-barrier plating, focussing on tantalum and ruthenium as diffusion barriers. The process developed and implemented within the CopPeR project will significantly improve the quality of the Cu metallization due to the fact that the conductivity limiting seed-Cu will be eliminated and thinner barrier films can be applied, e.g. by ALD (atomic layer deposition); so more volume is available in trenches for high quality, low resistivity Cu.

 

 

Motivation:

The semiconductor industry has arrived at a point where the scaling laws are starting to drive more scientific then engineering challenges. Specific issues are the increasing process variability, the expected physical and reliability limitations of devices and in interconnects as well as the need for new characterization methods and techniques. Long term challenges to enhance interconnect performance at and beyond the 32 nm node deal with substantially sophisticated tasks:
  • introducing novel interconnect schemes
  • introduction of new interconnect processes and materials
  • enhanced modelling and simulation techniques for several applications


Objectives:

The CopPeR project targets the mid- and long-term challenges of introducing new interconnect materials and deposition techniques for the 32 nm, 22 nm and 18 nm technology nodes. The main objective of the project is to overcome these challenges by the implementation of a unique copper deposition process, which will allow further scaling of interconnects. The research will be complemented with evaluation of the results on production scale demonstrators.

Consortium:

CopPeR will achieve the final goal through collaborations within a very strong consortium based on a team with outstanding scientific, engineering and manufacturing qualifications. The CopPeR consortium brings together Europe’s leading companies and academic institutions in the area of semiconductor technologies and material sciences. The representatives of each partner are experienced researchers with positions authorising them to manage the resources needed for the project.